Methods and apparatus for scribe street probe pads with reduced die chipping during wafer dicing

ABSTRACT

An example apparatus includes a semiconductor wafer with a plurality of probe pads each formed centered in scribe streets and intersected by saw kerf lanes. Each probe pad includes a plurality of lower level conductor layers arranged in lower level conductor frames, a plurality of lower level vias extending vertically through lower level insulator layers and electrically coupling the lower level conductor frames; a plurality of upper level conductor layers, each forming two portions on two outer edges of the probe pad, the two portions aligned with, spaced from, and on opposite sides of the saw kerf lane, the coverage of the upper level conductor layers being less than about twenty percent; and a plurality of upper level vias extending vertically through upper level insulator layers and coupling the upper level conductor layers electrically to one another and to the lower level conductor layers. Methods are disclosed.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. Nonprovisional patentapplication Ser. No. 15/820,176 filed Nov. 21, 2017, which is acontinuation of U.S. Nonprovisional patent application Ser. No.15/169,700 filed May 31, 2016, now U.S. Pat. No. 9,831,193 the contentsof which is herein incorporated by reference in its entirety.

TECHNICAL FIELD

This application relates generally to the use of probe and bond pads inscribe streets in semiconductor device and integrated circuitmanufacture, and more particularly to probe pads in scribe streetsdesigned to reduce die chipping effects during wafer dicing operations.

BACKGROUND

Integrated circuits are produced as a plurality of dies on asemiconductor wafer. The semiconductor wafer is subjected to variousprocessing steps, including: forming active areas within thesemiconductor material by use of doping and ion implantation; depositionand patterning of insulator layers; and forming conductor layers such asmetallic layers. The insulator layers are formed over the semiconductorsubstrate, and are also formed between and surrounding conductor layersand over the entire structure to provide electrical insulation betweenlayers of conductors. The conductor layers include materials such asdoped polysilicon, aluminum, and copper conductor layers. Anotherinsulator layer is formed over the entire device and is referred to asthe “passivation layer” or sometimes referred to as a “protectiveovercoat” or “PO” layer. The passivation layer provides electricalinsulation as well as protection from moisture and other impurities thatcan corrode or adversely affect the conductors and the semiconductorsubstrate. The insulator layers are thin, brittle layers of materialsthat can be sometimes be considered ceramic materials, such as silicondioxide, silicon nitride, silicon oxynitride, silicon carbide, andpolyimide.

After the integrated circuits are completely manufactured but while theintegrated circuits still reside on a single semiconductor wafer, thedevices are separated one from another. This operation is referred to as“singulation” or “dicing” of the semiconductor wafer. Singulation ofintegrated circuit devices from a semiconductor wafer includesphysically separating the devices by a sawing or scribing operation.Mechanical sawing or laser sawing is used to saw through thesemiconductor wafer in kerf lanes or scribe street areas that aredefined between the integrated circuit dies. Sometimes the separation isperformed by laser scribing followed by a mechanical breaking operationalong a scribed area.

Because the scribe street areas are portions of the semiconductor waferthat are subjected to the same processing steps and conditions as theintegrated circuit dies, and which can contain conductors and insulatorsas well as active areas on the semiconductor wafer, test structures areoften formed in the scribe streets. These test structures can be used tocharacterize the expected performance of the integrated circuit diesprior to completing the manufacturing process. If the tests on thestructures in the scribe streets indicate that the expected performanceof the integrated circuit dies formed on the semiconductor wafer doesnot meet or exceed the requirements for the devices, the remainingmanufacturing steps, including the use of expensive test and packagingequipment, and the use of various packaging materials, bond wires,solder balls and so forth can be saved. If the integrated circuitdevices on the semiconductor wafer cannot meet the necessary performancerequirements, the costs of completing these devices can be avoided. Inaddition, by using the test structures in the scribe streets, usefulparametric information can be gathered about the devices on thesemiconductor wafer without possibly damaging the bond pads in thefinished integrated circuit dies. For example, parametric information onmaterials such as conductivity/permittivity, transistor thresholdvoltages, device speed and device power consumption can be obtainedusing test structures formed in the scribe lane areas.

Testing can be done using a wafer probe card with fine probe needlesmaking electrical contact to bond pads or probe pads for the teststructures formed in the scribe streets. Once the semiconductor wafer isdiced into individual integrated circuit dies using the kerf lanes inthe scribe street areas, these test structures will be destroyed.

When the semiconductor wafer is sawed, chipping of the semiconductorwafer can occur. In a mechanical dicing operation, a rotating saw bladehas to cut through the insulating layers, the conductor layers, andthrough the semiconductor wafer. When thick metal structures are presentin the saw kerf lane where the saw blade enters the semiconductor wafer,chipping problems are increased. The metal can also clog the teeth inthe saw blade, causing damage to the tool and to the semiconductorwafer. The saw blade has significant vibration and heat is generatedwhile the saw blade is rotating and cutting through these mechanicallybrittle layers. Use of thick metal layers to form bond or probe pads inthe saw kerf lane has resulted in increased chipping and unwantedcracking in the semiconductor wafer during sawing.

Laser cutting can also be used to separate the wafer into individualintegrated circuit dies. In one approach a laser is used to scribetrenches into the surface of the wafer, and the wafer is then brokenmechanically along the cuts. In other approaches the laser is used tocut through the semiconductor wafer. In either of these laser dicingapproaches, cracks and chipping in the semiconductor wafer can occur.These chipping and cracking problems are increased with increased metaldensity in the saw kerf lanes.

U.S. Pat. No. 8,309,957, filed Apr. 13, 2010, issued Nov. 13, 2012,entitled “Replacement of Scribeline Padframe with Saw-Friendly Design,”listing Chatterjee et. al. as inventors, which is co-owned with thepresent application and which is hereby incorporated by reference in itsentirety herein, discloses reduced metal density in scribe probe pads.

SUMMARY

In described examples, an apparatus includes a semiconductor wafer witha plurality of probe pads each formed centered in scribe streets andintersected by saw kerf lanes. Each probe pad includes a plurality oflower level conductor layers arranged in lower level conductor frames, aplurality of lower level vias extending vertically through lower levelinsulator layers and electrically coupling the lower level conductorframes; a plurality of upper level conductor layers, each forming twoportions on two outer edges of the probe pad, the two portions alignedwith, spaced from, and on opposite sides of the saw kerf lane, thecoverage of the upper level conductor layers being less than abouttwenty percent; and a plurality of upper level vias extending verticallythrough upper level insulator layers and coupling the upper levelconductor layers electrically to one another and to the lower levelconductor layers. An opening in a passivation layer overlying the scribestreet exposes the uppermost upper conductor layer in the probe pad anda conductive material deposited in the opening forms an upper probe padsurface layer,

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a semiconductor wafer and integrated circuit dies.

FIG. 2 illustrates a semiconductor wafer and a wafer dicing saw.

FIG. 3 illustrates in a plan view a portion of a semiconductor wafer andintegrated circuit dies with scribe streets and probe pads.

FIG. 4 illustrates in a cross sectional view a portion of asemiconductor wafer.

FIG. 5 illustrates in a plan view a scribe street portion of asemiconductor wafer incorporating a probe pad embodiment.

FIG. 6 illustrates in a plan view a first level metal layer portion of aprobe pad embodiment.

FIG. 7 illustrates in a plan view a lower level conductor frame of aprobe pad embodiment.

FIG. 8 illustrates in a plan view a lower level conductor frame and viasof a probe pad embodiment.

FIG. 9 depicts in a plan view a lower level via layer of a probe padembodiment.

FIG. 10 depicts in a plan view an upper level conductor layer of a probepad embodiment.

FIG. 11 depicts in another plan view an upper level via layer of a probepad embodiment.

FIG. 12 depicts in a plan view another upper level conductor layer of aprobe pad embodiment.

FIG. 13 depicts in a plan view an upper surface layer of a probe padembodiment.

FIG. 14 depicts in a cross-sectional view a probe pad embodiment.

FIG. 15 illustrates in a flow diagram a method embodiment.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures arenot necessarily drawn to scale.

The term “coupled” may include connections made with interveningelements, and additional elements and various connections may existbetween any elements that are “coupled.”

The term “scribe street” includes similar terms such as “scribe lane”and “scribe line” and refers to areas on a semiconductor wafer betweenadjacent integrated circuit dies that are set aside for physicallyseparating the integrated circuit dies. In a mechanical sawingoperation, a saw kerf lane is positioned centrally in the scribe street.The laser or saw blade traverses the saw kerf lane during singulation.The material in the saw kerf lane is destroyed during the mechanicalsawing operation and is then lost. In a mechanical sawing operation, thesaw kerf lane is somewhat wider than the width of the saw blade, as thesaw blade vibrates and wobbles during sawing and removes material to awidth that is wider than the saw blade.

FIG. 1 depicts in a plan view 100 a semiconductor wafer 105 having aplurality of integrated circuit dies 110 formed on the semiconductorwafer 105. The semiconductor wafer is shown arranged on a wafer supportor frame 107. Not visible in this view is a supporting backing materialreferred to as “dicing tape” which lies beneath and is adhered to thesemiconductor wafer 105. During a dicing operation the dicing tapesupports and stabilizes the integrated circuit dies 110. As thesemiconductor wafer is cut or sawed through, the integrated circuit diesremain in position, are physically supported by the wafer dicing tape,and do not fall away from the support 107. Pick and place or other diehandling equipment can then be used to remove the integrated circuitdies from the wafer dicing tape after the integrated circuit dies havebeen sawed apart. The integrated circuit dies 110 are then processedfurther and eventually are packaged to form completed integrated circuitdevices.

Each of the integrated circuit dies 110 can include active devices suchas transistors, diodes and similar devices formed on the semiconductorsubstrate 105. The active devices are formed in active areas of thesemiconductor wafer. Active areas are areas formed using ionimplantation and impurity doping techniques to become p type and n typedoped areas. These p type and n type doped areas can be used to form:transistors such as bipolar transistors, metal oxide semiconductor (MOS)field effect transistors (MOSFETs); diodes; silicon controlledrectifiers; and other devices that conduct current in response to avoltage or current. Passive devices can be formed on the semiconductorwafer, including: capacitors; resistors; and inductors. The passivedevices can be formed either using the substrate material or in layersformed over the substrate. Sensors such as fluxgate sensors, currentsensors, photosensors, temperature sensors and other sensors can beformed using the active areas and the layers formed over the substrate.In an example a fluxgate sensor is formed on the integrated circuitdies. A fluxgate sensor includes a magnetic core material including ironwrapped in a conductive coil. When completed, the integrated circuitdies 110 each form a complete circuit that performs a desired function.The circuit is formed by coupling the transistors, resistors,capacitors, diodes, sensors etc. together and to input terminals forreceiving signals and power. The integrated circuit dies 110 can alsohave output terminals for outputting signals. The integrated circuitdies 110 can form circuits such as: transistors; digital circuits suchas logic gates; analog circuits such as rectifiers; controllers such asmicrocontrollers; processors such as digital signal processors orcentral processing units; non-volatile storage devices such as FLASHdevices; memory devices such as static random access memory (SRAM)devices or dynamic random access memory (DRAM) devices; integratedsensor devices, or other integrated circuit devices. Each of theintegrated circuit dies 110 on a semiconductor wafer 105 can be anidentical integrated circuit. Integrated circuits can include a few,many thousands, or even millions of devices.

FIG. 2 illustrates in another plan view 200 a semiconductor wafer 205shown in a mechanical sawing operation. In FIG. 2, similar referencelabels are used for those elements that correspond to the elements ofFIG. 1, except that the reference labels begin with the digit “2” inFIG. 2, for convenience. In FIG. 2, semiconductor wafer 205 is shownincluding a number of integrated circuit dies 210. A support 207provides mechanical support for the semiconductor wafer 205. A saw blade212 is shown being applied to the top surface of the semiconductor wafer205. The saw blade 212 will saw through the semiconductor wafer 205 indefined saw kerf lanes that are positioned in scribe streets between theintegrated circuit dies 210. The saw kerf lanes of the scribe streetsare areas that will be removed during the sawing operation and so anycircuitry positioned there will be destroyed. Test circuitry and certainstructures that can be used to characterize the material properties ofthe semiconductor wafer prior to dicing can be formed in the scribestreets. Probe pads formed in the scribe streets provide electricalcontact to the test structures. The probe pads can be used in a testoperation by applying a probe needle to make electrical contact to theprobe pad. After the wafer dicing is completed, these test structuresmay be destroyed and are therefore no longer available.

FIG. 3 depicts in a plan view 300 a portion of a conventionalsemiconductor wafer having a number of integrated circuit dies 310formed on it. Areas 326 and 328 are scribe streets including saw kerflanes 329 for sawing the integrated circuit dies 310 apart in a dicingoperation. The scribe streets have a width which can vary from aboutforty microns to over one hundred microns. In an example, the scribestreets are about eighty microns wide. Using less area of thesemiconductor wafer for the scribe street areas is desired, becauseusing a lower area for the scribe street areas leaves more semiconductorwafer area for forming additional integrated circuit dies, lowering thecost per integrated circuit. Kerf lanes 329 are shown in the centralportion of the scribe streets 326 and 328 and these kerf lanes identifythe places where the saw will cut through the insulator layers overlyingthe semiconductor wafer. The saw blade will also cut through thesemiconductor wafer entirely to physically separate the integratedcircuit dies from one another.

In FIG. 3, each integrated circuit die 310 is surrounded by aconventional scribe seal 322. The scribe seal includes the insulatorlayers and the conductor layers that are also used in forming theinsulators and conductors within the integrated circuit dies 310. Theconductor layers of the scribe seal are formed simultaneously with theintegrated circuit conductor layers. The insulator layers that liebetween and around the conductor layers within the integrated circuitdies 310 are also formed in the scribe seal 322. The scribe seals arearranged between the scribe streets 326, 328 and the integrated circuitdies 310 and the scribe seals surround the integrated dies 310. Thescribe seals are intended to reduce or prevent cracks formed in theinsulator layers during dicing in the scribe streets 326, 328 duringsawing or scribing from propagating into the integrated circuit dies310. The propagation of cracks that begins during the dicing operationis addressed by forming metal structures that extend vertically throughand interrupt the continuity of the brittle insulator layers. Byinterrupting the insulator layers, the scribe seal is arranged toprevent or to stop a crack from traversing the scribe seal structure.

In FIG. 3, each integrated circuit die 310 includes a crack arreststructure 324. The scribe seals 322 surround each integrated circuit dieand are placed between the scribe street and the interior of theintegrated circuit dies and extend around the periphery of theintegrated circuit dies 310. The crack arrest structures 324 alsosurround each integrated circuit die 310 and are positioned outside thescribe seal 322 for each integrated circuit die 310. The crack arreststructures 324 form a periphery around the scribe seal 322 for eachintegrated circuit die 310. The crack arrest structures 324 are added toprovide additional crack prevention. The crack arrest structures preventcracks in the insulator or passivation layers from propagating from thescribe streets into the integrated circuit dies 310.

U.S. Pat. No. 8,125,053, entitled “Embedded Scribe Lane Crack ArrestStructure for Improved IC Package Reliability of Plastic Flip-ChipDevices,” filed Feb. 4, 2004, issued Feb. 28, 2012, listing West et. al.as inventors, which is co-owned with the present application, and whichis hereby incorporated by reference in its entirety herein, disclosesadding crack arrest structures between the scribe streets and the scribeseals to further prevent crack propagation from the scribe line area.

In FIG. 3, the scribe streets include probe pads 301. These conductivepad areas are formed entirely within the scribe streets and areintersected by the saw kerf lanes 329. The conductive probe pads provideelectrical connection to a test apparatus by providing a conductive pathto test structures formed within the scribe streets. The probe pads 301can be arranged to supply power to a test structure, as an inputterminal of a test structure, or as an output terminal for a teststructure. During wafer level test operations, a probe card will bepositioned in proximity to the semiconductor wafer, and conductiveneedles will make physical and electrical contact to the probe pads 301.

The semiconductor wafer can be of any one of several known semiconductormaterials including silicon, gallium, gallium arsenide, silicongermanium, and other III-V compounds. These materials are all fairlybrittle. The insulator layers can be any of the insulator materials usedin semiconductor processing, including: silicon dioxide, siliconnitride, silicon oxynitride, silicon carbide, doped glass such asboron-silicate glass, phosphor silicate glass, undoped silicate glass,fluoro-silicate glass, tetraethyl ortho-silicate oxide (TEOS), andsilicon containing hydrogen silsesquioxane. Gels and organics can beused, such as polyimides, organic polymerics, and foams.

The mechanical sawing operations use a saw blade that is made of steelor titanium alloys with diamond material at the cutting surface. Whenthe semiconductor wafers are cut, a portion of the scribe streetmaterial remains with the integrated circuit dies including the scribeseal area. The conductor layers can include aluminum and its alloys, andcopper and its alloys, as well as other conductive material such asdoped polysilicon. When thick conductor materials such as copper areincluded in the probe pad areas, the saw blade has to saw through thesethick layers. The thick metal material can clog the saw tool, causingdamage to the tool and to the semiconductor wafer. Chipping and wafercracking can occur, resulting in loss of integrated circuit dies thatwould otherwise yield functional devices.

FIG. 4 depicts in a cross sectional view a portion of a semiconductorwafer 405 including upper level conductor layers and lower levelconductor layers such as are used in current semiconductor processes. InFIG. 4, an example structure 422 is shown. In this structure 422, threelower level metal layers 446 are coupled to an active area 439 and toone another by conductive vias 440 and 444 extending through lower levelinsulator layers. In FIG. 4, two upper level conductor layers 432, 438are formed in upper level insulator layers 454. These two upper levelconductor layers are coupled vertically and electrically to one anotherby an upper level via layer including vias 435, 436. A passivation layer456 overlies the structure.

In the structure 422 in FIG. 4, a semiconductor wafer 448 has an activearea 439 formed in an upper portion. The active area can be an n-dopedor p-doped area such as are used to form transistors. In FIG. 4, thestructure 422 shown is a portion of a scribe seal such as such as scribeseals 322 shown in the plan view of FIG. 3. In FIG. 4, those areas thatcorrespond to areas in FIG. 3 are shown with similar reference labels,except that the first digit is now a “4” for convenience. In FIG. 4, thescribe seal 422 is shown to illustrate the various insulator layers,conductor layers and vias used in manufacturing the semiconductor wafer.

Scribe seal 422 includes lower level vias 440 formed between the threelower level conductor layers 446. The lower level vias 440 can be formedusing tungsten plugs. Other conductive materials used for vias insemiconductor processes can be used. The vias 440 in scribe seal 422 aretrench vias, and the trench vias form a continuous interruption of theinsulator layers on one side of an integrated circuit die. In FIG. 4,the active area 439 will be formed simultaneously with the formation ofother active areas for the integrated circuit dies formed on thesemiconductor wafer. The scribe seal 422 is formed simultaneously withand using the same insulator layers and conductor layers used in theformation of devices within the integrated circuit die 410. In FIG. 4,the lower level conductors 446 can be aluminum. Other metals and alloyscan also be used. Aluminum has good adherence to oxides such as siliconoxides that are commonly used for the insulator layers, and has goodconductivity/resistance, and is relatively low in cost.

The insulator layers 450 are sometimes referred to by different termsdepending on the application and position over the semiconductorsubstrate. For example, insulator material formed over the active areaand prior to any metallization steps can be called “pre-metaldielectric” or “PMD.” Insulator layers that are formed surrounding metallayers can be called “inter-level dielectric” or “ILD.” Insulator layersthat are formed between layers of conductors can be referred to as“inter-metal dielectric” layers or “IMD.” Trench vias 440 are shownvertically stacked over and in contact with the active area 439. Forpurposes of this application, the term “via” includes the opening formedin an insulator layer and also the conductive material that fills theopening to form a vertical physical and electrical connection. In thescribe seal 422, trench vias 440 are used in the portion of the scribeseal closest to the integrated circuit die. The trench vias 440 and theconductor layers they couple together thus form a continuous wall ofconductor material that interrupts each of the insulation layers. Theuse of the scribe seal 422 is an attempt to stop any crack propagatingwithin an insulation layer from the scribe street area 426 fromcontinuing into the integrated circuit die area 410. The lower levelconductor layers 446 can be formed of a metal used in semiconductorprocesses for forming conductors in the “front end of the line”processes. For example, metal layers 446 can be formed of aluminum andaluminum alloys. Aluminum conductors in semiconductor devices can beformed using photolithography, including photoresist deposition,photoresist exposure, photoresist patterning, and etch methods. Thetrench vias 440 can be formed using conductive via materials typicallyused in semiconductor processes such as tungsten and its alloys. Otherconductive materials can be used. In FIG. 4, the lower level vias 444can be formed using “stitch” vias. These stitch vias do not form acontinuous wall but instead are formed as a number of individual columnsthat can be round, square or oval shaped and extending through theinsulation layer 450. The stitch vias provide physical support to thelower level conductive layers 446.

The insulation layers 450, 452 and 454 are formed using conventionalsemiconductor processes for dielectrics. These layers can be formedusing chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD) and can be thermally grown. Tetraethyl ortho-silicate(TEOS) can be used. Typically the insulator layers 450, 454, 452 willinclude oxide layers and nitride layers in different portions, so thatselective etching processes can be used. Etch stop layers such as can beformed in addition to and between the layers visible in FIG. 4.Additional films and layers can be included to: assist in etchprocessing; aid in adhesion; provide barrier layers; provideanti-reflective coatings; and provide backside anti-reflective coatingsto improve photolithographic processes. The materials used for theinsulator layers can include, without limitation: silicon oxide, siliconnitride, silicon carbide, silicon oxynitride, SiOC, and other films andgel dielectrics. High-k and low-k dielectrics can be included in theinsulator layers.

In FIG. 4, the scribe seal 422 also includes upper level layerconductors 432, 438. These can be formed in the “back end of the line”or “BEOL” processes. Copper conductors are used to form upper levelmetal conductor layers in many semiconductor processes. Copper has alower resistance than aluminum and may be less prone to electromigrationproblems. Diffusion barrier materials (not shown for clarity) surroundthe copper on all sides to prevent copper ion diffusion into surroundinglayers or materials. In FIG. 4, the scribe seal 422 includes a firstcopper conductor 438 and a second copper conductor 432 that is theuppermost upper level layer conductor in this example. In variousexample semiconductor processes, more or fewer conductor layers can beused, including more or fewer lower level conductor layers and more orfewer upper level conductor layers.

In FIG. 4, the copper conductor layers 432, 438 can be formed usingdamascene processes in BEOL processing. In damascene processes, thecopper is not patterned and etched as the aluminum lower levelconductors were. Instead, a metal inlay procedure is used. The insulatorlayers 452, 454 are patterned to form trenches. Copper seed layermaterial is sputtered or otherwise deposited. An electroplating processis performed to fill the trenches and to ensure complete filling of thetrenches, the electroplating continues above the surface of the trench.

After the electroplating is finished with an “overburden” layer formedabove the surface of the trenches, chemical mechanical processing or“CMP” is performed to complete the copper conductor layer and toplanarize the upper surface of the layer. In CMP, a chemically activeslurry is applied to a polishing pad. The slurry includes abrasiveparticles. The surface of the semiconductor wafer with the excesselectroplated material is applied to the pad in a circular or othermotion, and the excess copper material is polished away, leaving aplanar trench filled with the planarized copper conductor. Additionalinsulator layers are formed and vias such as 435 and 436 can be formedbetween the conductor layers using etch and etch stopping layers ofdielectric material. The upper level vias and the overlying trenches canbe filled using the electroplating process. In this manner severallayers of upper level conductors can be formed.

In the scribe seal 422, the uppermost conductor layer 432 is verticallyconnected to the layer 438 by a trench via 436. This trench via isformed on the side of the scribe seal 422 closest to the integratedcircuit die and continues the vertical wall that is formed interruptingthe insulation layers 450, 452, 454. In FIG. 4 an etch stop layer 452 isshown. However, this is but one example arrangement and the insulatorlayers 454, 450 and 452 can be formed of similar materials or ofdifferent materials as described above.

The scribe seal 422 of FIG. 4 also includes a passivation layer 456 thatoverlies the upper surface of the uppermost conductor layer 432 and canbe formed of silicon oxide, silicon nitride, silicon oxynitride andother dielectric materials. In FIG. 4, the uppermost layer of thepassivation layer 457 is silicon nitride. The remainder of thepassivation layer 459 can be silicon dioxide. The passivation layer 456forms a protective layer, electrically insulating the conductors andalso provides a physical coating to protect the metal conductors and thesemiconductor substrate from corrosive elements and moisture. To formbond pads contacting the upper level conductor layer in the integratedcircuit dies, openings are formed in the passivation layer 456 bypattern and etch processes.

In an example semiconductor process, the lower level conductor layers446 are fairly thin, such as about one micron thick or less. However,the upper level copper conductor layers and the upper level copper vialayers are each fairly thick, about three microns each, for a total ofnine microns of vertical thickness. In a conventional scribe streetprobe pad, each of the conductor layers including the upper levelconductor layers 432, 438 and vias 436 will be present. When a sawingoperation is performed this thick copper metal will be in the probe padsas the saw blade traverses the saw kerf lane. The thick metal materialscan prevent proper sawing, causing wafer chipping and cracking.

FIG. 5 illustrates in a plan view 500 a portion of a semiconductor waferincorporating an embodiment. In FIG. 5, for those elements thatcorrespond to elements in FIGS. 3 and 4, similar reference labels areused. However the first digit in the reference label is now a “5” forconvenience.

In FIG. 5, a single scribe street 528 is shown with a scribe probe pad501 positioned in a central portion. The scribe probe pad 501 is formedin an opening 502 made by etching the passivation material. The scribeprobe pad 501 includes a conductive material that is deposited in theopening to form the upper surface layer of the probe pad 501. In anexample process a combination of tantalum, tantalum nitride, nickel andpalladium are used to form a layer of Ta/TaN/Ni/Pd or TaN/Ni/Pd in theopening. Beneath the probe pad surface layer are islands of theuppermost one of the upper level layer conductors 532, shown with dashedlines as the upper level conductor layer 532 lies beneath the uppersurface layer of the probe pad 501. A plurality of these islands areformed on either side of, and arranged in a parallel orientation to, thesaw kerf lane 529. The saw kerf lane 529 does not intersect any portionof the upper level conductor layer 532. In an example embodiment thislayer is formed of a thick damascene copper layer. As will be furtherdescribed hereinbelow, for probe pads formed away from scribe streetintersections, the saw kerf lane 529 does not intersect any portion ofthe upper level conductor layers or the upper level vias. For a probepad formed at a scribe street intersection, the saw blade will encounterthe probe pad upper level conductor material but the metal coverage isgreatly reduced over prior probe pad arrangements.

The upper level conductor layer 532 is formed of columns or islands thatcan be round, square or oval and which are vertically connected by vias.In the illustrated example, the coverage of the upper level conductorlayer in probe pad 501 is less than about ten percent. This coveragepercentage is a ratio of the total surface area of the upper levelconductor layer material 532 in the probe pad 501 over the total surfacearea of the probe pad 501.

Dummy areas 534 are shown outside of the probe pad 501. As is known tothose of skill in the art, in using CMP processes dummy fill patternsare often added to make the pattern density in a layer to be polishedmore uniform. These dummy fill areas 534 do not have a function in thecircuit but instead improve the planarity of the CMP layers by reducing“dishing” that can occur when a portion of the insulator layer is freefrom the upper level conductor layer, that is, when the fill pattern isnon-uniform. In the embodiments, the central portion of the scribestreet is kept free from dummy fill material in the upper levelconductor layers, as shown in FIG. 5 no dummy areas 534 are placed inthe central portion of the scribe street on either side of the saw kerflane 529.

In an example semiconductor wafer, the scribe street 528 has a width W1of about 78 microns. The probe pad width W2 is about 74 microns. Theprobe pad 501 is shown as a square shape. In an alternative embodiments,the probe pad can be a rectangle having a width W2 as shown in FIG. 5,but having a greater or lesser length. The spacing between the insideedges of the two rows of the copper islands in the example probe pad isabout 65 microns, centered about the saw kerf lane 529. The total areaof the probe pad in an example embodiment is 74 microns×74 microns, or5476 square microns.

In an alternative arrangement to that shown in FIG. 5, the upper levelconductor layer 532 can include two narrow rails on two edges of theprobe pad, aligned with the saw kerf lane 529, instead of being formedin columns or islands. The two narrow rails can also be arranged oneither side of the probe pad, adjacent to the outside edges of the probepad, and arranged in parallel to and spaced from the saw kerf lane 529,and of dimensions such that the total coverage of the upper levelconductor layer is less than or equal to about ten percent. In otherexamples, the coverage could be less than about twenty percent.

In the descriptions of FIGS. 6-13 that follow, individual layers of theprobe pad structure of the embodiments are described in a sequencestarting with the lowest level conductor layer, including the vialayers, and moving to the upper surface of the probe pad.

FIG. 6 illustrates in a plan view 600 a portion of the first level metallayer for a probe pad area 601 over a semiconductor wafer. In FIG. 6,for those elements that correspond to elements in FIGS. 3-5, similarreference labels are used. However the first digit in the referencelabels is now a “6” for convenience.

A rectangular pad 661 is formed in a central portion of the probe padarea 601. The pad 661 could have other shapes as well. A first routingportion 663 is shown traversing the probe pad area, and is used to giverouting freedom so that signals can be routed through the probe padarea. Similarly, second routing portion 665 and third routing portion667 are shown traversing the probe pad area 601. The rectangular pad 661has contacts 669 shown below the first level metal layer. Contacts 669make electrical contact to an active area (not visible) in thesemiconductor wafer, the active area lying beneath the probe pad area601. In an alternative example, no contacts lie beneath the rectangularpad 661, where no contact to an active area is desired for a particularprobe pad.

In FIG. 7, a portion of a lower level conductor layer frame 771 is shownin a plan view 700 of a probe pad area 701. In FIG. 7, for thoseelements that correspond to elements in FIGS. 3-6, similar referencelabels are used. However the first digit in the reference label is now a“7” for convenience.

The conductor frame 771 is used for the second and higher layers of thelower level conductor layers that will correspond to some of the layers446 in FIG. 4. The frame 771 can be formed of the conductive materialused for the lower level conductor layers. In an example semiconductorwafer, the lower level conductor frame 771 can be formed of aluminum. Inthe embodiments, the lower level metal layers above the first levelmetal layer shown in FIG. 6 are formed using the frame 771 or a similarpattern in the probe pad area. The frame 771 has a border portion thatis coextensive with the probe pad area, and at least two central framemembers 772, 774 that will overlie the portions of rectangular pad 661in FIG. 6, the first level of metal. The lower level conductor frame 771is of sufficient width to allow for vias to be made below, and above,the conductor layer frame and to provide sufficient surface area forrobust electrical connections. The frame 771 is arranged to have openportions to reduce the metal content of the probe pad. The frame 771 hascoverage of less than about thirty percent. The coverage is a ratio ofthe surface area of the frame 771, including the outer frame border andthe inner member portions, over the total surface area of the probe padarea 701.

By reducing the metal content of each of the lower level conductorlayers, the amount of metal that the saw blade has to cut through whenthe probe pad area is traversed by the saw blade during dicing isgreatly reduced. Although FIG. 7 illustrates one possible pattern forthe conductor frame 771, other patterns that have reduced metal coveragecan be used with the embodiments. The outer borders of the frame providean area for vias to be made between the lower level conductor layer andother layers. The inner members 772, 774 provide additional area forvias to connect the lower level conductor layer frame 771 to otherlayers, including the rectangular pad shown in FIG. 6. The inner members772, 774 also provide physical support to the lower level conductorframe. In the illustrated example, the lower level conductor frame has acoverage of less than or equal to about thirty percent In other examplesthe coverage could be greater than thirty percent but still be reducedfrom a solid conductor layer, and reduce the metal the saw blade has tocut through.

FIG. 8 depicts in a plan view 800 a portion of a probe pad area 801. InFIG. 8, for those elements that correspond to elements in FIGS. 3-7,similar reference labels are used. However the first digit in thereference label is now an “8” for convenience. In FIG. 8, a lower levelconductor frame portion 871 formed on the second level metal layer isshown. The first level metal layer portions are shown below theconductor frame portion 871. The routing portions 865, 867 and 863 areshown in dashed lines because these portions of the first level metallayer lie beneath the second level metal conductor frame 871. The uppersurface of rectangular pad 861 is seen through the opening in thecentral portion of the conductor frame 871. Lower level vias 869 liebeneath the second level metal conductor frame 871 and connect thesecond level metal conductor frame 871 to the rectangular pad in thefirst level metal layer 861.

FIG. 9 depicts in a plan view 900 a portion of a probe pad area 901. InFIG. 9, for those elements that correspond to elements in FIGS. 3-8,similar reference labels are used. However the first digit in thereference label is now a “9” for convenience. In FIG. 9, a lower levelvia layer 981 is shown. Vias 981 are shown formed over portions of thesecond level metal conductor frame 971. These vias 981 will connect thesecond level metal conductor frame 971 to a third level metal conductorframe (not shown in FIG. 9) if used, or alternatively to an upper levelconductor layer. The second level metal frame 971 is shown dashed as itlies beneath the lower level via layer 981. The first level metal layerrectangular pad 961 is visible through the open portion of the center ofthe second level metal frame 971. The first level metal routing portions965, 967 and 963 are shown dashed as these first level metal portionslie beneath the second level frame 971. The vias 969 are shown dashed asthey lie beneath the second level metal frame 971. These vias connectthe second level conductor frame 971 to the rectangular pad 961 in thefirst level metal layer.

FIG. 10 depicts in another plan view 1000 a portion of a probe pad area1001. In FIG. 10, for those elements that correspond to elements inFIGS. 3-9, similar reference labels are used. However the first twodigits in the reference label are now “10” for convenience. In FIG. 10,an upper level conductor layer 1038 is shown having island portions. Theisland portions of layer 1038 are arranged along two edges of theoutside of the probe pad area, on opposing sides of the saw kerf lane1029, spaced from and arranged in parallel with the saw kerf lane 1029.The saw kerf lane 1029 does not intersect any portion of the upper levelconductor layer 1038. For a probe pad 1001 located at a scribe streetintersection, the saw kerf lane will intersect the upper level conductorlayer 1038; however the coverage for this layer is less than about 20%so the amount of metal the saw blade will encounter is greatly reduced.Vias 1037 shown in dashed lines lie beneath the islands of the upperlevel conductor layer 1038 and couple the upper level conductor layer tothe lower level metal layer conductors such as frame 1071, shown indashed lines as it lies beneath the upper level conductor layer 1038. Inthis example, the surface area of the upper level conductor layer 1038has a surface area that is less than ten percent of the total surfacearea of the probe pad area 1001. The coverage of the upper levelconductor layer is less than or equal to about ten percent. In otherarrangements, the coverage could be greater such as up to about twentypercent.

The island portions of the upper level conductor layer 1038 can berectangular, circular, or square as shown in this example. In anotheralternative arrangement, the upper level conductor layer 1038 can bearranged as two narrow rails, positioned at two edges of the probe padarea on opposing sides of and aligned in parallel to the saw kerf lane1029, so that when the saw blade traverses the saw kerf lane 1029 in adicing operation, the saw blade does not intercept any portion of theupper level conductor layer 1038.

FIG. 11 depicts in a further plan view 1100 the probe pad portion 1001at an upper level via level. In FIG. 11, for those elements thatcorrespond to elements in FIGS. 3-10, similar reference labels are used.However the first two digits in the reference label are now “11” forconvenience. In FIG. 11, upper level vias 1135 are shown arranged in twooutside edge portions of the probe pad area, spaced from, on opposingsides of, and aligned with the saw kerf lane 1129. The upper level vias1135 are arranged so that when a saw blade traverses the saw kerf lane1129 during a dicing operation, the saw blade does not intersect anyportion of the upper level vias 1135. For a probe pad located at anintersection of scribe streets, the saw kerf lane in one direction willintersect a portion of the upper level conductor layer. However thereduced coverage for this layer will result in very little metal forthis layer being cut by the saw blade. The upper level conductor layerislands 1138 such as shown in FIG. 10 are shown underlying the vias1135. The lower level conductor frame 1171 is shown in dashed lines asit underlies the upper level conductor layer 1138. If the upper levelconductor layers are arranged as two narrow rails in an alternativeembodiment, instead of as islands as shown in FIG. 10, the upper levelvias 1135 in FIG. 11 could also be arranged as trench vias that arecoextensive with the two rails. In the example shown in FIG. 11, theupper level via layer 1135 and the upper level conductor layer 1138 thatlies underneath the vias form vertical stacked column portions.

FIG. 12 depicts in a further plan view 1200 a portion of the probe padarea 1201. In FIG. 12, for those elements that correspond to elements inFIGS. 3-11, similar reference labels are used. However the first twodigits in the reference label are now “12” for convenience. In FIG. 12,upper level conductor layer 1232 is shown arranged as islands over theupper level via layer of FIG. 11. In FIG. 12, the upper level conductorlayer portions 1232 are shown as rectangular or square island portionsoverlying the upper level vias 1235. The upper level conductor layer1038 shown in FIG. 10, the upper level via layer 1135 shown in FIG. 11and the upper level conductor layer 1232 form vertical stacked columnsof conductor material. The lower level conductor frame 1271 is shown indashed lines as it underlies the upper level conductor layers and theupper level vial layers. The saw kerf lane 1229 is shown centered in theprobe pad area 1201 and intersecting the lower level conductor frame1271. The upper level conductor islands 1232 are arranged in two rowsalong two edges of the probe pad area, and are arranged on opposingsides, spaced from, and aligned with the saw kerf lane 1229. Thecoverage of upper level conductor layer 1232 is less than or equal toabout ten percent. As described hereinabove the coverage is a ratio ofthe total area of the upper level conductor layer 1232 over the totalsurface area of the probe pad 1201. Other coverage amounts could be usedsuch as up to less than about twenty percent. The arrangement of theupper level conductor layer 1232 is made so that when dicing, the upperlevel conductor layer 1232 does not have to be cut through for manyprobe pads. For probe pads located at scribe street intersections, theamount of upper level conductor metal that has to be cut through isgreatly reduced by use of the embodiments.

FIG. 13 illustrates in another plan view 1300 the probe pad area 1301.In FIG. 13, for those elements that correspond to elements in FIGS.3-12, similar reference labels are used. However the first two digits inthe reference label are now “13” for convenience. In FIG. 13, the upperprobe pad surface layer 1385 is shown overlying the upper levelconductor layer of FIG. 12. This probe pad surface layer 1385 isdeposited over an opening formed in the passivation layer (not shown)that is deposited on and overlies the probe pad and the semiconductorwafer after the upper level conductor layers are completed. Patterningand dielectric etch processes are used to form these openings. Theopening in the passivation layer in the scribe line forms the probe padarea. Other similar openings over the integrated circuit dies can formbond wire bonding pads. The opening is then coated with a barriermaterial that covers the upper surface of the upper level conductorlayer. Since the upper level conductor layer 1332 in an examplesemiconductor process is copper, a suitable barrier layer istantalum/tantalum nitride, which acts a diffusion barrier for copper.Other barrier layers can be used. Additional layers of nickel andpalladium provide a conductive finish layer that is resistant tocorrosion and pitting and which further provides a diffusion barrier forcopper. Thus in one example the upper probe pad surface layer istantalum, tantalum nitride, nickel, and palladium, Ta/TaN/Ni/Pd orsimply TaN/Ni/Pd. Alternative materials for the upper probe pad surfacelayer include gold, palladium, nickel, titanium and combinations ofthese layers such as electroless nickel immersion gold (ENIG) andelectroless nickel, electroless palladium, immersion gold (ENEPIG)layers that are suitable for wire bonding.

In FIG. 13, the upper probe pad surface layer 1385 overlies the islandsof the upper conductor layer 1332. The upper level vias 1335 and thefirst upper level conductor layer 1338 are shown as lying beneath theupper level conductor layer 1332. The lower level conductor frame 1371is shown in dashed lines as it lies beneath the upper level conductorlayers and the upper level via layer.

The saw kerf line 1329 intersects the probe pad area and intersects theupper probe pad surface layer 1385. When a saw blade traverses the sawkerf lane 1329 in a dicing operation, the saw blade will cut through theupper probe pad surface layer 1385. However, this upper probe padsurface layer 1385 is a few microns thick or less, and so does notcontribute to wafer cracking problems observed when sawing throughthicker conductor layers.

FIG. 14 illustrates in a cross sectional view a probe pad embodiment1401. In FIG. 14, for those elements that correspond to elements inFIGS. 3-13, similar reference labels are used. However the first twodigits in the reference label are now a “14” for convenience.

In FIG. 14, a portion of a semiconductor wafer 1448 is shown.Semiconductor wafers that can be used with the embodiments includesilicon, silicon germanium, gallium arsenide and other III-Vsemiconductor materials. The semiconductor wafer material is brittle andsubject to chipping when sawed during wafer dicing.

In FIG. 14, a lower level conductor layer or first level metal layer1461 is shown in cross section, this layer corresponds to therectangular pad portion 661 shown in a plan view in FIG. 6. The lowerlevel conductor layers can be formed from aluminum and aluminum alloys,for example, using photolithographic processing including photomasks,photoresist, exposure, development, pattern and etch steps. The aluminumlayers for the lower level conductor layers can be around 1 micronthick. Other thicknesses can be used.

In FIG. 14, additional lower level conductors are formed in insulatorlayers 1450. Vias are formed connecting the lower level conductors. Thevias can be tungsten or tungsten alloys and can form verticalconnections and electrical conductors that couple the lower levelconductor layers. In FIG. 14, vias 1479 correspond to the vias shown ina plan view in FIG. 8 and connect the rectangular pad 1461 in the firstlevel metal to the lower level conductor frame of the second level metalshown in the plan view of FIG. 8.

Continuing to refer to the cross section in FIG. 14, the second andthird level conductor layers also include two frame portions 1471-1, and1471-2. These are the second level metal and third level metal layersfor the probe pad 1401, and correspond to the frame portion 771 shown ina plan view in FIG. 7, and the subsequent figures, above.

In FIG. 14, via level 1481 connects the second level metal layer, frameportion 1471-1, to the third level metal layer, frame portion 1471-2.These vias correspond to the vias 981 shown in the plan view of FIG. 9hereinabove. The insulator layers 1450 surround and lie between thefirst, second and third metal layers 1461, 1471-1, 1471-2, to completethe lower level conductor layers for the probe pad 1401.

In FIG. 14, the via layer 1437 connects vertically between the lowerlevel conductor layers and the upper level conductor layers andcorresponds to the vias 1037 shown in the plan view of FIG. 10. Notethat the vias shown in the figures are merely illustrative and are drawnrelatively larger than would be seen in a practical device. This is donefor clarity of illustration, the drawings are not to scale. Also only afew representative vias are shown in each via layer, in a practicaldevice many more would be used to reduce electrical resistance, improvereliability, and to provide additional mechanical support for theconductor layers.

In FIG. 14, upper level conductor layer 1438 is the first damascenemetal layer and corresponds to the plan view of the islands of upperlevel conductor layer 1039 shown in FIG. 10. The upper level conductorlayers and upper level vias are arranged at two sides or edges of theprobe pad 1401 and are spaced apart from and on opposite sides of thesaw kerf lane 1429. When a saw blade traverses the saw kerf lane 1429,the saw blade will not intersect the upper level conductor layers or theupper level vias. For a probe pad located at a scribe streetintersection, the saw blade will intersect the upper level conductorlayer. The coverage amount for the embodiment probe pads is less thantwenty percent so the amount of metal the saw blade has to cut throughis greatly reduced over prior probe pads.

In FIG. 14, upper level vias 1435 correspond to the upper level viasshown in a plan view in FIG. 11. These upper level vias can be formed inthe same damascene process using either a via first or via lastdielectric etch process to pattern layers 1454 surround and lie betweenthe upper level conductor layers. Alternatively the via level can beformed separately in a single damascene process. Upper level conductorlayer 1432 corresponds to the upper level conductor layer islands 1232shown in a plan view in FIG. 12. These upper level conductor portionscan be formed using a damascene process with CMP.

In FIG. 14, a passivation layer 1456 is shown formed over the upperlevel conductor layer 1432. The passivation layer 1456 can include asilicon dioxide layer 1459 with a silicon nitride layer 1457 overlyingthe silicon oxide layer.

An opening in the passivation layer 1456 defines the area for probe pad1401. This opening is formed simultaneously with openings in thepassivation layer 1456 over integrated circuit dies elsewhere on thesemiconductor wafer, to form bond pad openings. After the opening 1456is formed using dielectric pattern and etch processes, the upper surfacelayer of the probe pad 1485 is formed by deposition. This layercorresponds to the layer 1385 shown in a plan view in FIG. 13. Asdescribed hereinabove, this upper probe pad surface layer can be formedas a barrier layer such as tantalum and tantalum nitride followed withadditional layers of nickel and palladium. Other suitable conductivelayers including gold, platinum, titanium and combinations of theselayers can be used. The upper probe pad surface layer is conductive andresistant to diffusion and corrosion. The upper probe pad layer 1485 canbe sputter deposited and then the conductor material on top of thepassivation layer 1456 can be removed through a CMP process. The bondpad top conductor can be relatively thin in thickness compared to theunderlying conductor layers.

In FIG. 14, saw kerf lane 1429 intersects probe pad 1401. In a dicingoperation a saw blade will cut through the semiconductor wafer 1448 andall of the layers up to and through the upper probe pad surface layer1485. Due to the arrangements of the embodiments, however, the saw bladewill not cut through any portion of the upper level conductors 1432,1435, 1438 for most probe pads. The saw blade will cut through smallportions of the lower level conductor frames 1471-1, 1471-2 and therectangular first level metal pad 1461. These layers are fairly thinwhen compared to the much thicker upper level conductor layers. Bygreatly reducing the metal thickness the saw blade must cut through todice the wafer, the chipping problems observed in the conventionalscribe street probe pad areas are eliminated or greatly reduced due tothe use of the embodiments.

In the illustrated examples, the coverage of the upper level conductorlayers is less than or equal to about ten percent up to less than abouttwenty percent. In the illustrated examples, the coverage of the lowerlevel conductor layers is less than or equal to about thirty percent forthe second and higher lower level conductor layers. Other coverageamounts can be used.

The number of lower level conductor layers and upper level conductorlayers shown in the illustrative examples does not limit the number ofconductor layers that can be used in an embodiment. For example, whilethree lower level metal layers were shown in the figures, additionallower level metal layers can be used. In other arrangements, fewer lowerlevel metal layers can be used. Similarly, while only two upper levelconductor layers are shown in the figures, more upper level conductorlayers, or fewer, can be used. As described hereinabove, while the upperlevel conductor layers and upper level vias described herein are shownas pillars or columns, narrow rails can be used for the upper levelconductor portions. Trench vias or stitch vias can be used to verticallycouple the upper level conductor layers.

FIG. 15 depicts in a flow diagram an example method embodiment 1500. Inthe method illustrated in FIG. 15, the method begins at step 1501,Start. At step 1503, probe pads are formed centered in scribe streets ona semiconductor wafer, integrated circuits on the wafer spaced by thescribe streets.

At step 1505, saw kerf lanes are defined in the scribe streets thatintersect the probe pads.

At step 1507, for each of the probe pads, the method continues byforming upper level conductors in two portions on two edges of the probepads, the two portions spaced from, aligned with and on opposite sidesof the saw kerf lane. The upper level conductor layer has coverage ofless than about twenty percent.

At step 1509, lower level conductors are formed in the probe pads byforming lower level frames with outside edges coextensive with the edgesof the probe pads, and having openings in a central portion.

At step 1511, openings are formed in a passivation layer that overliesthe semiconductor wafer, the opening exposing the upper surfaces of theuppermost upper level conductor layer.

At step 1513, an upper probe pad surface is formed by depositingconductive material over the opening. The conductive material is inelectrical contact with the uppermost upper level conductor layer.

The method steps shown in FIG. 15 illustrate one possible order ofsteps. However, the order of steps is merely illustrative and can bemodified to form an alternative embodiments. For example, the steps1503, 1505, and 1507 can be performed simultaneously instead of in theorder shown in FIG. 15. These modifications form additional embodimentthat are within the scope of the appended claims.

Example embodiments and arrangements include a semiconductor wafer witha plurality of scribe streets arranged in rows and columns on thesurface of the semiconductor wafer, and having saw kerf lanes defined ina central portion and running parallel with the scribe streets; aplurality of probe pads each formed centered in the scribe streets andintersected by the saw kerf lanes. Each probe pad further includes aplurality of lower level conductor layers arranged in lower levelconductor frames each having an outside border portion coextensive withthe outside edge of the probe pad and each having openings in a centerportion; a plurality of lower level insulator layers between the lowerlevel conductor layers and surrounding the lower level conductor layers;a plurality of lower level vias extending vertically through the lowerlevel insulator layers and electrically coupling the lower levelconductor frames to one another; a plurality of upper level conductorlayers, each forming two portions of upper level conductor layermaterial on two outer edges of the probe pad, the two portions alignedwith, spaced from, and on opposite sides of the saw kerf lane, thecoverage of the upper level conductor layers being less than abouttwenty percent; a plurality of upper level insulator layers between andsurrounding the upper level conductor layers; and a plurality of upperlevel vias extending vertically through the upper level insulator layersand coupling the upper level conductor layers electrically to oneanother and to the lower level conductor layers.

In another example, for ones of the plurality of probe pads located inthe scribe streets but not at an intersection of the scribe streets, thesaw kerf lane does not intersect any portion of an upper level conductorlayer. In a further example, the semiconductor wafer includes apassivation layer overlying the top surface of the semiconductor wafer;an opening in the passivation layer coextensive with the probe pad; andan upper surface layer covering the surface of the opening in the probepad, including a conductive layer deposited in the opening and coveringthe uppermost surface of the upper conductive layer. In still anotherexample, the coverage of the upper level conductor layer is less thanabout twenty percent.

In a further example, the upper level conductor layers further includecopper. In still another example the upper level conductor layers arearranged as islands of upper level conductor material. In a furtherexample the upper level conductor layers and the upper level vias formcolumns of upper level conductor material extending vertically throughthe upper level insulator material. In yet another example the upperlevel conductor layers are arranged as rows of upper level conductormaterial. In still a further example, in the semiconductor wafer thelower level conductor layers further include aluminum.

In yet a further example, the lower level conductor layers have acoverage that is less than or equal to about thirty percent. In stillanother example the semiconductor wafer further includes a first levelconductor layer formed overlying the semiconductor wafer and formedbelow the lower level conductor layers, the first level conductor layerforming a rectangular pad region located in a central portion of theprobe pad.

In still another example, in the semiconductor wafer including membersof the lower level conductor frames across the open central portion, andvias connecting the member portion of a lower level conductor frame tothe rectangular pad region of the first level conductor layer.

In yet another example, the semiconductor wafer includes contactsbetween the rectangular pad in the first level conductor layer and anactive area in the semiconductor wafer.

In another example embodiment, a probe pad includes a saw kerf lanecentered in a scribe street including the probe pad, the saw kerf laneintersecting the probe pad in one direction; a plurality of lower levelconductor layers arranged in lower level conductor frames each having anoutside border portion coextensive with the outside edge of the probepad and each having openings in a center portion; a plurality of lowerlevel insulator layers between the lower level conductor layers andsurrounding the lower level conductor layers; a plurality of lower levelvias extending vertically through the lower level insulator layers andelectrically coupling the lower level conductor frames to one another; aplurality of upper level conductor layers, each forming two portions ofupper level conductor layer material on two outer edges of the probepad, the two portions aligned with, spaced from, and on opposite sidesof the saw kerf lane, the coverage of the upper level conductor layersbeing less than about twenty percent. The probe pad includes a pluralityof upper level insulator layers between and surrounding the upper levelconductor layers; a plurality of upper level vias extending verticallythrough the upper level insulator layers and coupling the upper levelconductor layers electrically to one another and to the lower levelconductor layers; and a probe pad upper surface layer deposited in anopening in a passivation layer formed over the scribe street, the probepad upper surface layer covering the probe pad and in electrical contactwith upper surface of the uppermost upper level conductor layer.

In yet another example, in the probe pad, the saw kerf lane does notintersect any portion of the upper level conductor layers. In stillanother example the probe pad in which the upper level conductor layercoverage is less than about ten percent. In yet another example, theprobe pad includes the upper level conductor layer which includescopper. In still another example, the probe pad in which the upper levelconductor layers include island portions arranged in the two portions.

In an example method, the method includes forming probe pads centered inscribe streets over a semiconductor wafer, the scribe streets formedbetween integrated circuit dies arranged in rows and columns andseparated from one another by the scribe streets; defining saw kerflanes centered in the scribe streets that intersect the probe pads;forming upper level conductors in the probe pads in two portions at twoedges of the probe pads, the two portions spaced from, aligned with, andon opposite sides of the saw kerf lanes, the coverage of the upper levelconductors being less than twenty percent; forming lower levelconductors in the probe pads underlying the upper level conductors, thelower level conductors forming lower level frames with outside edgescoextensive with the outside edges of the probe pads, and havingopenings in central portions of the lower level frames; forming lowerlevel vias extending through lower level insulator layers between thelower level conductors that electrically connect the lower level frames;forming upper level vias extending through upper level insulator layersbetween the upper level conductors and electrically connecting the upperlevel conductor layers to one another and to the lower level conductors;forming an opening in a passivation layer covering the probe pads andthe scribe streets, the opening exposing the upper surfaces of theuppermost upper level conductor in the probe pads; and forming an upperprobe pad surface layer by depositing a conductive material over theopening and in electrical contact with the uppermost upper levelconductor.

In still another method, the method includes dicing the semiconductorwafer by cutting through the probe pads and the semiconductor waferalong the saw kerf lanes, the saw having a blade traversing the saw kerflane so that for probe pads located away from scribe streetintersections, the saw blade never intersects the upper level conductorlayers.

In a further example method, the method includes forming the upper levelconductors in two portions, including forming island of upper levelconductor material in rows spaced from one another. In yet anotherexample, the method includes forming upper level vias extending throughthe upper level insulators and forming columns of upper level conductormaterial, the columns including at least a first layer of upper levelconductor material, an upper level via, and a second layer of upperlevel conductor material, physically stacked to form a vertical column.

In another example method, the method includes forming the upper levelconductors in two portions including forming narrow rails of upper levelconductor material. In still another example, the method includesforming upper level vias connecting a rail of a first layer of upperlevel conductor material to a rail of a second layer of upper levelconductor material located above the first rail of upper level conductormaterial,

In another example method, the coverage of the upper level conductormaterial is less than or equal to about ten percent. In still a furtherexample method, the coverage of the lower level conductor material isless than or equal to about thirty percent.

Modifications are possible in the described embodiments, and otherembodiments are possible within the scope of the claims.

What is claimed is:
 1. A method of making semiconductor devices,comprising: forming integrated circuits on a wafer space by scribestreets arranged in rows and columns and having saw kerf lanes definedin a central portion of and running parallel with the scribe streets;forming a plurality of probe pads each formed centered in the scribestreets and intersected by the saw kerf lanes, each probe pad furtherincluding: a lower level conductor layer having an outside borderportion coextensive with the outside edge of the probe pad and anopening in a center portion; and an upper level conductor layerproviding two portions of upper level conductor layer material on onlytwo outer edges of the probe pad, the two portions aligned with, spacedfrom, and on opposite sides of the saw kerf lane.
 2. The method of claim1, in which for ones of the plurality of probe pads located in thescribe streets but not in an intersection of scribe streets, the sawkerf lane does not intersect any portion of an upper level conductorlayer.
 3. The method of claim 1, and further including: providing anpassivation layer overlying the top surface of the semiconductor wafer;providing an opening in the passivation layer coextensive with the probepad; and providing an upper surface layer covering the surface of theopening in the probe pad, including a conductive layer deposited in theopening and covering the uppermost surface of the upper conductivelayer.
 4. The method of claim 1, in which the coverage of the upperlevel conductor layer is less than about twenty percent.
 5. The methodof claim 1, in which the upper level conductor layer further includescopper.
 6. The method of claim 1, in which the upper level conductorlayer is arranged as islands of upper level conductor material.
 7. Themethod of claim 1 in which the upper level conductor layer is arrangedas narrow rails of upper level conductor material.
 8. The method ofclaim 1, in which the lower level conductor layer further includesaluminum.
 9. The method of claim 1, in which the lower level conductorlayer has a coverage that is less than or equal to about thirty percent.10. The method of claim 1, and further providing a first level conductorlayer formed below the lower level conductor layer, the first levelconductor layer providing a rectangular pad region located in a centralportion of the probe pad.
 11. The method of claim 10, and furtherproviding member portions of the lower level conductor layer across theopening in the central portion, and vias connecting the member portionsof the lower level conductor layer to the rectangular pad region of thefirst level conductor layer.
 12. A method of making semiconductordevices, comprising: forming integrated circuits on a wafer spaced byscribe streets arranged in rows and columns and having saw kerf lanesdefined in a central portion of and running parallel with the scribestreets; forming a plurality of probe pads each formed centered in thescribe streets and intersected by the saw kerf lanes, each probe padfurther including: a plurality of lower level conductor layers eachhaving an outside border portion coextensive with the outside edge ofthe probe pad and an opening in a center portion; and a plurality ofupper level conductor layers each providing two portions of upper levelconductor layer material on only two outer edges of the probe pad, thetwo portions aligned with, spaced from, and on opposite sides of the sawkerf lane.
 13. The method of claim 12, in which for ones of theplurality of probe pads located in the scribe streets but not in anintersection of scribe streets, the saw kerf lane does not intersect anyportion of an upper level conductor layers.
 14. The method of claim 12,and further including: providing a passivation layer overlying the topsurface of the semiconductor wafer; providing an opening in thepassivation layer coextensive with the probe pad; and providing an uppersurface layer covering the surface of the opening in the probe pad,including a conductive layer deposited in the opening and covering theuppermost surface of the upper conductive layer.
 15. The method of claim14, in which the coverage of the upper level conductor layers is lessthan about twenty percent.
 16. The method of claim 15, in which theupper level conductor layers further include copper.
 17. The method ofclaim 15, in which the lower level conductor layers further includealuminum.
 18. The method of claim 15, in which the lower level conductorlayers have a coverage that is less than or equal to about thirtypercent.
 19. The method of claim 15, and further providing a first levelconductor layer formed below the lower level conductor layers, the firstlevel conductor layer providing a rectangular pad region located in acentral portion of the probe pad.
 20. The method of claim 19, andfurther providing member portions of the lower level conductor layersacross the opening in the central portion, and vias connecting themember portions of the lower level conductor layers to the rectangularpad region of the first level conductor layer.
 21. A method of makingsemiconductor devices, comprising: forming integrated circuits on awafer by scribe streets arranged in rows and columns and having saw kerflanes defined in a central portion and running parallel with the scribestreets; forming a plurality of probe pads each formed centered in thescribe streets and intersected by the saw kerf lanes, each probe padfurther including: a lower level conductor layer having an outsideborder portion coextensive with the outside edge of the probe pad and anopening in a center portion; and an upper level conductor layerproviding portions of upper level conductor layer material on outeredges of the probe pad, the portions spaced from, and only on oppositesides of the saw kerf lane.
 22. The method of claim 21, in which forones of the plurality of probe pads located in the scribe streets butnot in an intersection of scribe streets, the saw kerf lane does notintersect any portion of an upper level conductor layer.
 23. The methodof claim 21, and further including: providing a passivation layeroverlying the top surface of the semiconductor wafer; providing anopening in the passivation layer coextensive with the probe pad; andproviding an upper surface layer covering the surface of the opening inthe probe pad, including a conductive layer deposited in the opening andcovering the uppermost surface of the upper conductive layer.
 24. Themethod of claim 21, and further providing a first level conductor layerformed below the lower level conductor layer, the first level conductorlayer providing a rectangular pad region located in a central portion ofthe probe pad.
 25. The method of claim 24, and further providing memberportions of the lower level conductor layer across the opening in thecentral portion, and vias connecting the member portions of the lowerlevel conductor layer to the rectangular pad region of the first levelconductor layer.
 26. A method of making semiconductor devices,comprising: forming integrated circuits on a wafer spaced by scribestreets arranged in rows and columns and having saw kerf lanes definedin a central portion and running parallel with the scribe streets;forming a plurality of probe pads each formed centered in the scribestreets and intersected by the saw kerf lanes, each probe pad furtherincluding: a plurality of lower level conductor layers each having anoutside border portion coextensive with the outside edge of the probepad and an opening in a center portion; and a plurality of upper levelconductor layers each providing portions of upper level conductor layermaterial on outer edges of the probe pad, the portions spaced from, andonly on opposite sides of the saw kerf lane.
 27. The method of claim 26,in which for ones of the plurality of probe pads located in the scribestreets but not in an intersection of scribe streets, the saw kerf lanedoes not intersect any portion of an upper level conductor layers. 28.The method of claim 26, and further including: providing a passivationlayer overlying the top surface of the semiconductor wafer; providing anopening in the passivation layer coextensive with the probe pad; andproviding an upper surface layer covering the surface of the opening inthe probe pad, including a conductive layer deposited in the opening andcovering the uppermost surface of the upper conductive layer.
 29. Themethod of claim 28, and further providing a first level conductor layerformed below the lower level conductor layers, the first level conductorlayer providing a rectangular pad region located in a central portion ofthe probe pad.
 30. The method of claim 29, and further providing memberportions of the lower level conductor layers across the opening in thecentral portion, and vias connecting the member portions of the lowerlevel conductor layers to the rectangular pad region of the first levelconductor layer.
 31. The method of claim 1, wherein after the integratedcircuits are formed but will still residing on the wafer, thesemiconductor devices are physically separated one from another by asawing or scribing operation along the kerf lanes in the scribe streets.32. The method of claim 31, wherein the sawing or scribing operationdoes not cut through the upper level conductor layer.
 33. The method ofclaim 32, wherein at least a portion of the upper level conductor layerremains on the periphery of each separated or singulated semiconductordevice.
 34. The method of claim 12, wherein after the integratedcircuits are formed but will still residing on the wafer, thesemiconductor devices are physically separated one from another by asawing or scribing operation along the kerf lanes in the scribe streets.35. The method of claim 34, wherein the sawing or scribing operationdoes not cut through the upper level conductor layer.
 36. The method ofclaim 35, wherein at least a portion of the upper level conductor layerremains on the periphery of each separated or singulated semiconductordevice.
 37. The method of claim 21, wherein after the integratedcircuits are formed but will still residing on the wafer, thesemiconductor devices are physically separated one from another by asawing or scribing operation along the kerf lanes in the scribe streets.38. The method of claim 37, wherein the sawing or scribing operationdoes not cut through the upper level conductor layer.
 39. The method ofclaim 38, wherein at least a portion of the upper level conductor layerremains on the periphery of each separated or singulated semiconductordevice.
 40. The method of claim 26, wherein after the integratedcircuits are formed but will still residing on the wafer, thesemiconductor devices are physically separated one from another by asawing or scribing operation along the kerf lanes in the scribe streets.41. The method of claim 40, wherein the sawing or scribing operationdoes not cut through the upper level conductor layer.
 42. The method ofclaim 41, wherein at least a portion of the upper level conductor layerremains on the periphery of each separated or singulated semiconductordevice.